The model is strengthened by SIMS characterization focused on the evolution of hydrogen during annealing and on numerical calculations. Based on the related characterization and observations, a physical model is established based on the behavior of implanted hydrogen during annealing. The kinetics is characterized by using a specially-dedicated furnace and by considering laser annealing. Widespread simulations and comparisons demonstrate that this structure can be considered in high power and RF applications.Īt first, the thesis studies the kinetics of Smart Cut™ in silicon implanted with hydrogen ions for annealing temperature in the range 500☌-1300☌. Gate capacitances are approximately equal to the conventional structure but its higher transconductance results in more than 3-times higher cut-off frequency and about 75% improvement in maximum oscillation frequency, at VG = 10 V and VD = 3.5 V. Also, the resultant device has lower delay time. The negative differential resistance is diminished and carriers mobility improved which result in higher and more stable saturation current in comparison with conventional structure. It reduced from ~690 K to ~353 K at VG = 10 V. Thus, large value of temperature variation arising from high gate and drain biasing in SOI devices is reduced by applying the proposed structure. These additional layers absorb the heat of active region and transfer to the substrate area. Vertical layers are in parallel and extended from silicon drift region toward the substrate through oxide region as heating passageways. In this paper a novel structure is proposed for silicon on insulator MOSFETs which improves DC and RF characteristics by three vertical layers of 4H-SiC.
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